Machinery & Equipment
Molecular Beam Epitaxy (MBE)
The Molecular Beam Epitaxy (MBE) system is termed as an ultra-high vacuum technique for the layer-by-layer (epitaxial) deposition of thin films. The technique is exclusively used for the development of very high purity III-V semiconductors where the thickness of layers can be measured with sub-monolayer accuracy. The system contains six solid source effusion cells and 2 RF plasma gas sources. It is exclusively used in the manufacture of semiconductor devices like…
- Types
- Normal MBE Systems · Laser MBE Systems
- Applications
- R&D · Production
5 editions30 December 2025